CMT-TIT0697
1200V HALF-BRIDGE SIC MOSFET GATE DRIVER (OPTIMIZED FOR XM3 POWER MODULES)
CMT-TIT0697 is a Gate Driver board optimized for XM3 Silicon Carbide (SiC) MOSFET Power Modules rated at 125°C (Ta). This board, based on CISSOID HADES gate driver chipset, offers thermal headroom for the design of high density power converters in automotive and industrial applications. It enables high frequency (>100KHz) and fast SiC MOSFET’s switching (dV/dt>50KV/µs), improving efficiency and reducing size and weight of the power converters. The board is designed for harsh voltage environments supporting the drive of 1200V power modules with isolation voltages up to 3600V (50Hz, 1min) and creepage distances of 14mm. Protection functions such as undervoltage lockout (UVLO), Active Miller Clamping (AMC) and Desaturation detection ensure the safe drive and reliable protection of the power module in case of fault events.
Key features
- Designed to drive XM3 1200V/300A SiC MOSFET modules
- Operating temperature: -40°C to 125°C
- Bus voltage:1200V max
- 14mm creepage/12mm clearance
- Isolation: 3600VAC @50Hz (1min)
- >50KV/µs dV/dt immunity
- Low parasitic capacitance between primary and high-side: 10pF
- Switching frequency upto 100kHz
- +15V/-4V (3% precision) gate driving voltages
- Low inductance gate loop design
- Single power supply: 12V to 18V
- RS422 PWM input interface
- Open-drain fault output
- Under voltage lockout (UVLO)
- Optional on-board non-overlap generation
- Anti-overlap protection (on PWM inputs)
- Glitch suppressor (on PWM inputs)
- Active Miller Clamping
- Desaturation protection
- Gate-Source short-circuit protection
Applications
- Ideally suited for automotive and industrial markets
- Motor drives: electrical vehicles, fab automation
- Power Inverters, DC-DC converters, Onboard Battery Chargers (OBC)
- Power conversion: uninterruptible power supplies, wind turbines
Ordering information
| Ordering reference | Description | Link |
| CMT-TIT0697A |
1200V HALF-BRIDGE SIC MOSFET GATE DRIVER |
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